| PART |
Description |
Maker |
| EDE2516AASE-4A-E EDE2516AASE-5C-E |
16M X 16 DDR DRAM, 0.6 ns, PBGA84
16M X 16 DDR DRAM, 0.5 ns, PBGA84
|
ELPIDA MEMORY INC
|
| S29WS128P0PBAW002 S29WS256P0PBAW000 S29WS128P0LBAW |
512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory 8M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory 32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
|
Spansion, Inc.
|
| HYMR16418H-850 HYMR13218H-840 HYMR14818H-840 HYMR1 |
64M X 18 RAMBUS MODULE, 50 ns, DMA184 RIMM-184
32M X 18 RAMBUS MODULE, 40 ns, DMA184 RIMM-184
48M X 18 RAMBUS MODULE, 40 ns, DMA184 RIMM-184
32M X 16 RAMBUS MODULE, 53 ns, DMA184
32M X 16 RAMBUS MODULE, 40 ns, DMA184
32M X 16 RAMBUS MODULE, 45 ns, DMA184
32M X 18 RAMBUS MODULE, 45 ns, DMA184
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYRDU64164M-80M HYRDU72184M-80M HYRDU72184M-60M |
4M X 16 RAMBUS, PBGA66 MICRO, BGA-66
4M X 18 RAMBUS, PBGA74 MICRO, BGA-74
|
Hynix Semiconductor, Inc.
|
| MC-4516DA726 |
16M-Word By72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| MX23L1651MC-50G MX23L1651 MX23L1651HC-15 |
16M-BIT [16M x 1] CMOS SERIAL MASK-ROM
|
MCNIX[Macronix International]
|
| TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位（100万16位）的CMOS闪存EEPROM的（1,600 EEPROM中的CMOS与非
|
Toshiba Corporation
Toshiba, Corp.
|
| MC-4R128CPE6C-845 MC-4R128CPE6C MC-4R128CPE6C-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
Performance Semiconductor, Corp.
NEC Corp.
NEC[NEC]
|
| V436416S04VTG |
3.3 Volt 16M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 16M*64位高性能无缓冲器PC10000MHZSDRAM模块) 3.3伏特16米x 64高性能00兆赫PC100的内存模块，缓冲.3 1,600 * 64位高性能无缓冲器PC100的和100MHZSDRAM模块
|
Mosel Vitelic, Corp.
|
| KMM53216000BV |
16M x 32 DRAM SIMM(16M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
